Wikipedia / 1N4148 signal diode
Wikipedia / 1N4148 signal diode
The 1N4148 is a standard silicon switching signal diode. It is one of the most popular and long-lived switching diodes because of its dependable specifications and low cost. Its name follows the JEDEC nomenclature. The 1N4148 is useful in switching applications up to about 100MHz with a reverse-recovery time of no more than 4ns.
History
Texas Instruments announced the 1N914 diode in 1960. It was registered at JEDEC by Texas Instruments no later than 1961, and was second-sourced by 11 manufacturers that same year.
The 1N4148 was registered at JEDEC in 1968 as a silicon switching signal diode for military and industrial applications. It was second-sourced by many manufacturers; Texas Instruments listed their version of the device in an October 1966 data sheet.
The 1N914 and 1N4148 have an enduring popularity in low-current applications.
Overview
As the most common mass-produced switching diode, the 1N4148 replaced the older 1N914. They can be used interchangeably, and are cross-reference replacements for each other. They differed mainly in their leakage current specification, however, today most manufacturers list common specifications. For example, Vishay lists the same leakage current for both parts:
25nA at -20V, 25°C
5μA at -75V, 25°C
50μA at -20V, 150°C
Packages
The JEDEC registered part numbers 1N914 and 1N4148 were originally only available in an axial package, but over time similar parts became available in surface-mount packages too.
Through-hole package:
1N4148 in DO-35 glass axial package.
Surface-mount packages:
LL4148 in MiniMELF package.
1N4148W in SOD-123 package.
1N4148WS in SOD-323 package.
1N4148WT in SOD-523 package.
Note: Some 1N4148 family surface-mount packages are marked with "T4" text.
Specifications
Absolute maximum ratings (stress ratings, consult datasheet for recommended ratings)
VRRM = 100V (maximum repetitive reverse voltage)
IO = 200mA (average rectified forward current)
IF = 300mA (DC forward current)
If = 400mA (recurring peak forward current)
IFSM = 1A at 1s pulse width; 4A at 1μs pulse width (non-repetitive peak forward surge current)
Electrical and thermal characteristics
VF = 1V at 10mA (maximum forward voltage)
VR = 75V at 5μA; 100V at 100μA (minimum breakdown voltage and reverse leakage current)
trr = 4ns (maximum reverse-recovery time)
PD = 500mW (maximum power dissipation)
See also
References
Further reading
Historical databooks
, 1100 pages, 1970, Fairchild Semiconductor.
, 210 pages, 1978, Fairchild Semiconductor.
, 508 pages, 1988, Motorola.
Rectifier , 410 pages, 1995, Motorola.
, 1258 pages, 1973, Texas Instruments.